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2SK3148 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK3148
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ⤠10µs, duty cycle ⤠1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ⥠50 â¦
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Ratings
100
±20
20
80
20
20
40
30
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS 100
â
â
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
â
â
V IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
â
â
±10
µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
â
â
10
µA VDS = 100 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
VGS(off)
1.0
â
2.5
V ID = 1 mA, VDS = 10 V
RDS(on)
â
45
60
m⦠ID = 10 A, VGS = 10 VNote4
RDS(on)
â
65
85
m⦠ID = 10 A, VGS = 4 V Note4
|yfs|
8.5
14
â
S ID = 10 A, VDS = 10 V Note4
Input capacitance
Ciss
â
900
â
pF VDS = 10 V, VGS = 0,
Output capacitance
Coss
â
400
â
pF f = 1 MHz
Reverse transfer capacitance
Crss
â
210
â
pF
Turn-on delay time
td(on)
â
15
â
Rise time
tr
â
120
â
Turn-off delay time
td(off)
â
200
â
Fall time
tf
â
150
â
Bodyâdrain diode forward voltage
VDF
â
0.9
â
Bodyâdrain diode reverse recovery
trr
time
â
90
â
Note: 4. Pulse test
ns ID = 10 A, VGS = 10 V,
ns RL = 3 â¦
ns
ns
V IF = 20 A, VGS = 0
ns IF = 20 A, VGS = 0
diF/ dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7
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