2SK2955 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2955
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^Note3
E_AR ^Note3
Pch ^Note2
Tch
Tstg
Ratings
60
±20
45
180
45
45
173
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 60
Gate to source breakdown voltage V_(BR)GSS ±20
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
1.5
Static drain to source on state
resistance
R_DS(on)
—
R_DS(on)
—
Forward transfer admittance
|y_fs|
24
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse
recovery time
t_rr
—
Note: 4. Pulse test
Typ
—
—
—
—
—
0.010
0.015
40
2200
1050
320
25
200
320
240
0.95
60
Max
—
—
±10
10
2.5
0.013
0.025
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 60 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 20 A, V_GS = 10 V^Note4
I_D = 20 A, V_GS = 4 V ^Note4
I_D = 20 A, V_DS = 10 V ^Note4
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 20 A, V_GS = 10 V,
R_L = 1.5 Ω
I_F = 45 A, V_GS = 0
I_F = 45 A, V_GS = 0
diF/ dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 7