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2SK1628 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET
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2SK1628, 2SK1629
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1628
2SK1629
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol Min
Drain to source
breakdown voltage
2SK1628
V(BR)DSS
450
2SK1629
500
Gate to source breakdown voltage
V(BR)GSS
±30
Gate to source leak current
IGSS
—
Zero gate voltage drain 2SK1628
IDSS
—
current
2SK1629
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on 2SK1628
RDS(on)
—
state resistance
2SK1629
—
Forward transfer admittance
|yfs|
12
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body to drain diode forward voltage
VDF
—
Body to drain diode reverse recovery
trr
—
time
Note: 3. Pulse test
Typ
—
—
—
—
—
0.20
0.22
20
2800
780
90
32
140
200
100
1.1
600
Ratings
450
500
±30
30
120
30
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
—
—
±10
250
3.0
0.25
0.27
—
—
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test conditions
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
Ω ID = 15 A, VGS = 10 V *3
S
ID = 15 A, VDS = 10 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 15 A, VGS = 10 V,
ns RL = 2 Ω
ns
ns
V IF = 30 A, VGS = 0
ns IF = 30 A, VGS = 0,
diF/dt = 100 A/µs
Rev.3.00 May 15, 2006 page 2 of 6
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