2SK1302 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1302
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol
V (BR)DSS
VGSS
ID
ID(pulse)*1
IDR
Pch^*2
Tch
Tstg
Ratings
100
±20
20
80
20
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 100
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
resistance
RDS(on)
—
—
Forward transfer admittance
|yfs|
10
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body to drain diode forward voltage
VDF
—
Body to drain diode reverse recovery
trr
—
time
Note: 3. Pulse test
Typ
—
—
—
—
—
0.065
0.085
16
1300
540
160
12
100
300
150
1.3
300
Max
—
—
±10
250
2.0
0.085
0.12
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V *³
ID = 10 A, VGS = 4 V *³
ID = 10 A, VDS = 10 V *³
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 10 A, VGS = 10 V,
RL = 3 Ω
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0,
diF/dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6