2SK1056 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1056, 2SK1057, 2SK1058
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1056
2SK1057
2SK1058
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSX
VGSS
ID
IDR
Pch*¹
Tch
Tstg
Item
Symbol Min
Typ
Drain to source
2SK1056 V(BR)DSX
120
—
breakdown voltage
2SK1057
140
2SK1058
160
Gate to source breakdown voltage
V(BR)GSS
±15
—
Gate to source cutoff voltage
VGS(off)
0.15
—
Drain to source saturation voltage
VDS(sat)
—
—
Forward transfer admittance
|yfs|
0.7
1.0
Input capacitance
Ciss
—
600
Output capacitance
Coss
—
350
Reverse transfer capacitance
Crss
—
10
Turn-on time
ton
—
180
Turn-off time
toff
—
60
Note: 2. Pulse test
Ratings
120
140
160
±15
7
7
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
(Ta = 25°C)
Max
Unit
Test conditions
—
V ID = 10 mA, VGS = –10 V
—
1.45
12
1.4
—
—
—
—
—
V IG = ±100 µA, VDS = 0
V ID = 100 mA, VDS = 10 V
V
ID = 7 A, VGD = 0 *²
S ID = 3 A, VDS = 10 V *²
pF VGS = –5 V, VDS = 10 V,
pF ^{f = 1 MHz}
pF
ns VDD = 20 V, ID = 4 A
ns
Rev.2.00 Sep 07, 2005 page 2 of 5