2SC5628 Datasheet, PDF(2/10 Page) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

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2SC5628 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

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2SC5628

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

(Ta = 25Â°C)

Symbol Min Typ Max Unit

Test Conditions

V(BR)CBO

V IC = 10ÂµA , IE = 0

ICBO

0.2

ÂµA VCB = 12V , IE = 0

ICEO

ÂµA VCE = 8V , RBE = â

IEBO

ÂµA VEB = 1.5V , IC = 0

hFE

100 160

VCE = 1V , IC = 5mA

Cob

0.55 0.85

pF VCB = 1V , IE = 0

f = 1MHz

GHz VCE = 1V , IC = 5mA

dB VCE = 1V, IC = 5mA

f = 900MHz

1.1

2.0

dB VCE = 1V, IC = 5mA

f = 900MHz

Rev.3.00 Aug 10, 2005 page 2 of 9

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