2SC5545 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial VHF / UHF wide band amplifier

2SC5545
Electrical Characteristics
Item
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V_(BR)CBO
15
—
—
V I_C = 10µA , I_E = 0
I_CBO
—
—
1
µA V_CB = 12V , I_E = 0
I_CEO
—
—
1
mA V_CE = 6V , R_BE = ∞
I_EBO
—
—
10
µA V_EB = 1.5V , I_C = 0
h_FE
80
120 160
V_CE = 3V , I_C = 20mA
Cob
— 0.69 1.1
pF V_CB = 3V , I_E = 0
f = 1MHz
f_T
10
12.6
—
GHz V_CE = 3V , I_C = 20mA
PG
14
16
—
dB V_CE = 3V, I_C = 20mA
f = 900MHz
NF
—
1.1
2.0
dB V_CE = 3V, I_C = 5mA
f = 900MHz
Rev.2.00 Aug 10, 2005 page 2 of 7