2SC4050_15 Datasheet, PDF(2/7 Page) Renesas Technology Corp

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2SC4050_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon NPN Epitaxial

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2SC4050

Preliminary

Electrical Characteristics

(Ta = 25Â°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

120

V IC = 10 Î¼A, IE = 0

Collector to emitter breakdown voltage V(BR)CEO 120

V IC = 1 mA, RBE = â

Emitter to base breakdown voltage

V(BR)EBO

V IE = 10 Î¼A, IC = 0

Collector cutoff current

ICBO

0.1

Î¼A VCB = 70 V, IE = 0

Emitter cutoff current

IEBO

0.1

Î¼A VEB = 2 V, IC = 0

DC current transfer ratio

hFE

400

800

VCE = 12 V, IC = 2 mA*1

Collector to emitter saturation voltage

VCE(sat)

0.1

V IC = 10 mA, IB = 1 mA*1

Base to emitter saturation voltage

VBE(sat)

1.1

V IC = 10 mA, IB = 1 mA*1

Notes: 1. Pulse test

R07DS0274EJ0400 Rev.4.00

Jan 10, 2014

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