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2SC4050_11 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon NPN Epitaxial
2SC4050
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
120
—
—
V IC = 10 A, IE = 0
Collector to emitter breakdown voltage V(BR)CEO 120
—
—
V IC = 1 mA, RBE = 
Emitter to base breakdown voltage
V(BR)EBO
5
—
—
V IE = 10 A, IC = 0
Collector cutoff current
ICBO
—
—
0.1
A VCB = 70 V, IE = 0
Emitter cutoff current
IEBO
—
—
0.1
A VEB = 2 V, IC = 0
DC current transfer ratio
hFE
400
—
800
VCE = 12 V, IC = 2 mA*1
Collector to emitter saturation voltage
VCE(sat)
—
—
0.1
V IC = 10 mA, IB = 1 mA*1
Base to emitter saturation voltage
VBE(sat)
—
—
1.1
V IC = 10 mA, IB = 1 mA*1
Notes: 1. Pulse test
R07DS0274EJ0300 Rev.3.00
Mar 28, 2011
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