2SC4050 Datasheet, PDF(2/6 Page) Hitachi Semiconductor

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

2SC4050 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

◁

2SC4050

Electrical Characteristics

(Ta = 25Â°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

120

V IC = 10 ÂµA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO 120

V IC = 1 mA, RBE = â

Emitter to base breakdown voltage

V(BR)EBO

V IE = 10 ÂµA, IC = 0

Collector cutoff current

ICBO

0.1

ÂµA VCB = 70 V, IE = 0

Emitter cutoff current

IEBO

0.1

ÂµA VEB = 2 V, IC = 0

DC current transfer ratio

hFE*1

250

800

VCE = 12 V, IC = 2 mA*2

Collector to emitter saturation voltage

VCE(sat)

0.1

V IC = 10 mA, IB = 1 mA*2

Base to emitter saturation voltage

VBE(sat)

1.1

V IC = 10 mA, IB = 1 mA*2

Notes: 1. The 2SC4050 is grouped by hFE as follows.

2. Pulse test

Grade

Mark

KID

KIE

hFE

250 to 500 400 to 800

Rev.2.00 Aug 10, 2005 page 2 of 5

▷