2SC2618 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC2618
Electrical Characteristics
Item
Symbol Min
Collector to base breakdown voltage
V_(BR)CBO
35
Collector to emitter breakdown voltage V_(BR)CEO
35
Emitter to base breakdown voltage
V_(BR)EBO
4
Collector cutoff current
DC current transfer ratio
I_CBO
h_FE1*¹
—
100
h_FE2
10
Collector to emitter saturation voltage
V_CE(sat)
—
Base to emitter voltage
V_BE
—
Note: 1. The 2SC2618 is grouped by h_FE1 as follows.
Grade
C
D
Mark
RC
RD
h_FE1
100 to 200 160 to 320
Typ
—
—
—
—
—
—
0.2
0.64
Max
—
—
—
0.5
320
—
0.6
—
Unit
V
V
V
µA
V
V
(Ta = 25°C)
Test conditions
I_C = 10 µA, I_E = 0
I_C = 1 mA, R_BE = ∞
I_E = 10 µA, I_C = 0
V_CB = 20 V, I_C = 0
V_CE = 3 V, I_C = 10 mA
(Pulse test)
V_CE = 3 V, I_C = 500 mA
(Pulse test)
I_C = 150 mA, I_B = 15 mA
(Pulse test)
V_CE = 3 V, I_C = 10 mA
(Pulse test)
Rev.2.00 Aug 10, 2005 page 2 of 4