2SA673_11 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

2SA673, 2SA673A
Preliminary
Electrical Characteristics
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Collector to emitter
saturation voltage
DC current transfer ratio
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
V_CE(sat)
h_FE*¹
2SA673
Min Typ Max
–35 —
—
–35 —
—
–4
—
—
—
— –0.5
— –0.2 –0.6
60
— 320
2SA673A
Min Typ Max
–50 —
—
–50 —
—
–4
—
—
—
— –0.5
— –0.2 –0.6
60
— 320
DC current transfer ratio
h_FE
10
—
—
10
—
—
Base to emitter voltage
V_BE
— –0.64 —
— –0.64 —
Notes: 1. The 2SA673 and 2SA673A are grouped by h_FE as follows.
2. Pulse test
B
C
D
60 to 120 100 to 200 160 to 320
(Ta = 25°C)
Unit
Test conditions
V I_C = –10 μA, I_E = 0
V I_C = –1 mA, R_BE = ∞
V I_E = –10 μA, I_C = 0
μA V_CB = –20 V, I_E = 0
V I_C = –150 mA,
I_B = –15 mA*²
V_CE = –3 V,
I_C = –10 mA
V_CE = –3 V,
I_C = –500 mA*²
V V_CE = –3 V,
I_C =–10 mA
R07DS0429EJ0300 Rev.3.00
Jun 07, 2011
Page 2 of 4