R1EX24128BSAS0I_15 Datasheet, PDF (17/18 Pages) Renesas Technology Corp – Two-wire serial interface 128k EEPROM (16-kword × 8-bit)

Revision History
R1EX24128BSAS0I/R1EX24128BTAS0I Data Sheet
Rev.
1.00
2.00
Date
Aug 04, 2010
Jan 31, 2013
3.00
Sep 18, 2013
4.00
Dec 18, 2013
Page
2
3
14
1
2
3
6
Description
Initial issue
Summary
Addition Voltage detector in Block Diagram.
Addition DC Characteristics blow.
ISB =0.2μA (Typ)@3.3V, ICC1=0.3mA(Typ)@3.3V, , ICC2=1.5mA(Typ)@3.3V
Addition Data of Shipped sample.
Delete Memory cell characteristics @ 85°C
Addition these items for Notes.
(Power Source Noise Countermeasures)
(Device Address Input and Write Protect Input)
Addition Halogen free products in Feature.
Ordering information
Addition orderable part number #U0, #K0 on SOP type and #U0 on TSSOP type.
Addition Halogen free and Inner wire item.
DC characteristics
Correct temperature condition Ta=−40 to +105°C to −40 to +85°C.
Addition Device Address pin description
These pins are internally pulled-down to V_SS. The device reads these pins as Low
if unconnected.
Addition Write Protect pin description
WP pin is not pulled-down inside the device, please do not use it in the floating
state.
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