R1EX24064ASAS0I_15 Datasheet, PDF (17/18 Pages) Renesas Technology Corp – Two-wire serial interface 64k EEPROM (8-kword × 8-bit)

Revision History
R1EX24064ASAS0I/R1EX24064ATAS0I Data Sheet
Rev.
0.01
0.02
Date
Dec 28, 2007
Jan 08, 2009
1.00
Aug 29, 2011
2.00
Nov 11, 2013
Page
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1
3
4
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6
14
2
3
14
Description
Initial issue
Summary
Features
Power dissipation Active(write) change 3.5mA to 3.0mA.
Endurance cycles change 10⁶ cycles to 1,000k cycles @ 25°C.
Data retentions years change 10 years to 100 years @ 25°C.
DC characteristics
Write Vcc current change 3.5 mA to 3.0 mA.
Memory cell characteristics new is described.
AC characteristics
Erase/Write endurance is deleted.
Notes1. change Not 100% tested.
Notes3 deleted.
Deletion preliminary
Addition of device address description
These pins are internally pulled-down to Vss. The device reads these pins
as Low if unconnected.
Addition of write protect description
The WP pin is internally pulled-down to Vss. Write operations for all
memory array are allowed if unconnected.
Change of Vcc turn on description
⋅Vcc turn on speed should be longer than 10 μs. to
⋅Vcc turn on rate should be longer than 2 μs/V.
Addition Voltage detector in Block Diagram.
Addition DC characteristics
I_SB =0.5μA(Typ)@3.3V, I_CC1=0.2mA(Typ)@3.3V, I_CC2=1.5mA(Typ)@3.3V
Addition these items for Notes
(Power Source Noise Countermeasures) ,
(Device Address Input, Write Protect input)
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