R1EX24064ASAS0I_11 Datasheet, PDF (17/18 Pages) Renesas Technology Corp – Two-wire serial interface 64k EEPROM (8-kword 꼌 8-bit)

Revision History
R1EX24064ASAS0I/R1EX24064ATAS0I Data Sheet
Rev.
0.01
0.02
Date
Dec. 28, 2007
Jan. 08, 2009
1.00
Aug. 29, 2011
Page
—
1
3
4
—
6
14
Description
Summary
Initial issue
Features
Power dissipation Active(write) change 3.5mA to 3.0mA.
Endurance cycles change 10⁶ cycles to 1,000k cycles @ 25°C.
Data retentions years change 10 years to 100 years @ 25°C.
DC characteristics
Write Vcc current change 3.5 mA to 3.0 mA.
Memory cell characteristics new is described.
AC characteristics
Erase/Write endurance is deleted.
Notes1. change Not 100% tested.
Notes3 deleted.
Deletion preliminary
Addition of device address description
These pins are internally pulled-down to Vss. The device reads these pins
as Low if unconnected.
Addition of write protect description
The WP pin is internally pulled-down to Vss. Write operations for all
memory array are allowed if unconnected.
Change of Vcc turn on description
Vcc turn on speed should be longer than 10 s . to
Vcc turn on rate should be longer than 2 s/V.
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