R1EX24004ASAS0I_15 Datasheet, PDF (16/17 Pages) Renesas Technology Corp – Two-wire serial interface 4k EEPROM (512-word × 8-bit)

Revision History
R1EX24004ASAS0I/R1EX24004ATAS0I Data Sheet
Rev.
0.01
0.02
Date
Dec 26, 2007
Jan. 08, 2009
1.00
Nov 08, 2013
Page
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1
4
5
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2
3
14
Description
Summary
Initial issue
Features
Endurance cycles change 10⁶ cycles to 1,000k cycles @25°C.
Data retentions years change 10 years to 100 years @25°C.
Memory cell characteristics new is described.
AC characteristics
Erase/Write endurance is deleted.
Notes1. change Not 100% tested.
Notes3 deleted.
Deletion of preliminary
Addition Voltage detector in Block Diagram.
Addition DC characteristics
I_SB =0.5μA(Typ)@3.3V, I_CC1=0.2mA(Typ)@3.3V, I_CC2=1.0mA(Typ)@3.3V
Addition these items for Notes
(Power Source Noise Countermeasures),
(Device Address Input, Write Protect input)
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