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RQA0011DNS_12 Datasheet, PDF (14/33 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET
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RQA0011DNS
Output Power, Drain Current
vs. Frequency
50
4
Pout
40
3
30
ID
2
20
10
450
1
VDS = 7.5 V
IDQ = 200 mA
Pin = +25 dBm
0
500
550
Frequency f (MHz)
Output Power, Drain Current,
vs. Drain to Source Voltage
50
4
Pout
40
3
30
ID
2
20
1
f = 520 MHz
IDQ = 200 mA
Pin = +25 dBm
10
0
3456789
Drain to Source Voltage VDS (V)
Output Power, Drain Current,
vs. Idling Current
50
4
Pout
40
3
30
ID
2
20
1
f = 520 MHz
VDS = 7.5 V
Pin = +25 dBm
10
0
0 100 200 300 400 500
Idling Current IDQ (mA)
R07DS0095EJ0600 Rev.6.00
Mar 19, 2012
Preliminary
Power Gain, Power Added Efficiency,
vs. Frequency
30
80
PAE
25
70
20
60
PG
15
50
10
5
0
450
40
VDS = 7.5 V
IDQ = 200 mA 30
Pin = +25 dBm
20
500
550
Frequency f (MHz)
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
40
80
PAE
30
60
20
40
PG
10
20
f = 520 MHz
IDQ = 200 mA
Pin = +25 dBm
0
0
3456789
Drain to Source Voltage VDS (V)
Power Gain, Power Added Efficiency,
vs. Idling Current
40
80
PAE
30
60
20
40
PG
10
20
f = 520 MHz
VDS = 7.5 V
Pin = +25 dBm
0
0
0 100 200 300 400 500
Idling Current IDQ (mA)
Page 14 of 32
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