R1LV1616H-I_15 Datasheet, PDF (13/23 Pages) Renesas Technology Corp – Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)

R1LV1616H-I Series
Read Cycle
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Output hold from address change
LB#, UB# access time
Chip select to output in low-Z
LB#, UB# enable to low-Z
Output enable to output in low-Z
Chip deselect to output in high-Z
LB#, UB# disable to high-Z
Output disable to output in high-Z
Write Cycle
Parameter
Write cycle time
Address valid to end of write
Chip selection to end of write
Write pulse width
LB#, UB# valid to end of write
Address setup time
Write recovery time
Data to write time overlap
Data hold from write time
Output active from end of write
Output disable to output in high-Z
Write to output in high-Z
Symbol
t_RC
t_AA
t_ACS1
t_ACS2
t_OE
t_OH
t_BA
t_CLZ1
t_CLZ2
t_BLZ
t_OLZ
t_CHZ1
t_CHZ2
t_BHZ
t_OHZ
R1LV1616H-I
-4SI, -4LI
Min Max
45


45

45

45

30
10


45
10

10

5

5

0
20
0
20
0
15
0
15
-5SI
Min
55




10

10
10
5
5
0
0
0
0
Max

55
55
55
35

55




20
20
20
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
2, 3
2, 3
2, 3
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
R1LV1616H-I
-4SI, -4LI
-5SI
Symbol Min Max Min
t_WC
t_AW
t_CW
t_WP
t_BW
t_AS
t_WR
t_DW
t_DH
t_OW
t_OHZ
t_WHZ
45

55
45

50
45

50
35

40
45

50
0

0
0

0
25

25
0

0
5

5
0
15
0
0
15
0
Max










20
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
5
4
6
7
2
1, 2
1, 2
Rev.1.01, Nov.18.2004, page 11 of 19