PA1890_15 Datasheet, PDF (12/14 Pages) Renesas Technology Corp – N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

C) Common
5
1000
100
µPA1890
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
62.5˚C/W
10
1
0.1
1m
10m
Mounted on Ceramic Substrate
of 5000 mm² x 1.1 mm
Single Pulse
PD(FET1):PD(FET2) = 1:1
100m
1
10
PW - Pulse Width - S
100
1000
10
Data Sheet G14762EJ2V0DS