BCR20KM_15 Datasheet, PDF (10/14 Pages) Renesas Technology Corp – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
Repetitive peak off-state current Tj=125°C/150°C, VDRM applied
VTM
On-state voltage
Tc=25°C, ITM=30A, Instantaneous measurement
VFGT !
VRGT !
Gate trigger voltage ^✽2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT #
#
IFGT !
IRGT !
Gate trigger current ^✽2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
IRGT #
#
VGD
Rth (j-c)
(dv/dt)c
Gate non-trigger voltage
Tj=125°C/150°C, VD=1/2VDRM
Thermal resistance
Junction to case ^✽3
Critical-rate of rise off-state commutating voltage^✽4 Tj=125°C/150°C
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Limits
Min. Typ. Max.
—
— 2.0/3.0
—
— 1.5
—
— 1.5
—
— 1.5
—
— 1.5
—
—
20
—
—
20
—
—
20
0.2/0.1 —
—
—
— 2.0
10/1 —
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
V/µs
Test conditions
1. Junction temperature
Tj=125°C/150°C
2. Rate of decay of on-atate commutating current
(di/dt)c=–10A/ms
3. Peak off-state voltage
VD=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
10³
7
5
3
2
10²
7
Tj = 150°C
5
3
2
10¹
7
5
3
Tj = 25°C
2
10⁰
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
240
200
160
120
80
40
0
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002