BCR16CM Datasheet, PDF (10/12 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

The product guaranteed maximum junction
temperature 150°C (See warning.)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140
ALUMINUM AND GREASED
NATURAL CONVECTION
120
120 120 t2.3
100
100 100 t2.3
80
60 60 t2.3
60
CURVES APPLY
40 _{REGARDLESS OF}
CONDUCTION
20 _{ANGLE RESISTIVE,}
0 ^{INDUCTIVE LOADS}
0 2 4 6 8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
5
3 ^{TYPICAL EXAMPLE}
2
10⁵
7
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120 140160
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
5
DISTRIBUTION T2⁺, G^–
3
TYPICAL
2
EXAMPLE
10²
7
5
3
2
10¹
7
5
3
2
T2⁺,
T2^– ,
G⁺
G^–

TYPICAL
EXAMPLE
10⁰
–40 0
40 80
120 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
140
NO FINS, CURVES
APPLY REGARDLESS
120
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
100
LOADS
80
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Mar. 2002