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UPG2163T5N Datasheet, PDF (1/10 Pages) NEC – GaAs MMIC SPDT SWITCH FOR 2.4 GHz AND 5 GHz DUALBAND WIRELESS LAN
μPG2163T5N
GaAs Integrated Circuit
Broadband SPDT Switch for Dual-Band Wireless LAN
PreliminaryData Sheet
R09DS0019EJ0300
Rev.3.00
May 19, 2011
DESCRIPTION
The μ PG2163T5N is GaAs MMIC SPDT (Single Pole Double Throw) switch which was developed for 2.4 GHz and 6
GHz dual-band wireless LAN. This device can operate at frequencies from 0.5 to 2.5 GHz, 4.9 to 6.0 GHz and 8.0 GHz,
with low insertion loss and high isolation.
This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to
high-density surface mounting.
<R> FEATURES
• Operating frequency
: f = 0.5 to 2.5 GHz, 4.9 to 6.0 GHz and 8.0 GHz
• Switch control voltage
: Vcont (H) = 2.8 to 5.0 V (3.0 V TYP.)
: Vcont (L) = −0.3 to 0.3 V (0 V TYP.)
• Low insertion loss
: Lins1 = 0.40 dB TYP. @ f = 2.4 to 2.5 GHz
: Lins2 = 0.50 dB TYP. @ f = 4.9 to 6.0 GHz
: Lins3 = 0.90 dB TYP. @ f = 8.0 GHz
: Lins4 = 0.50 dB TYP. @ f = 0.5 to 2.5 GHz
• High isolation
: ISL1 = 38 dB TYP. @ f = 2.4 to 2.5 GHz
: ISL2 = 30 dB TYP. @ f = 4.9 to 6.0 GHz
: ISL3 = 23 dB TYP. @ f = 8.0 GHz
: ISL4 = 43 dB TYP. @ f = 0.5 to 1.0 GHz
: ISL5 = 38 dB TYP. @ f = 1.0 to 2.5 GHz
• Handling power
: Pin (1 dB) = +31.0 dBm TYP. @ f = 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Pin (1 dB) = +29.0 dBm TYP. @ f = 6.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
• High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm)
<R> APPLICATIONS
• Dual-band wireless LAN (IEEE802.11a/b/g/n), etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
μPG2163T5N-E2 μPG2163T5N-E2-A 6-pin plastic TSON
(Pb-Free)
G4X
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPG2163T5N
CAUTION
Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this
device. This device must be protected at all times from ESD. Static charges may easily produce potentials of
several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard
ESD precautions must be employed at all times.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0019EJ0300 Rev.3.00
May 19, 2011
Page 1 of 8