UPD5756T6N Datasheet, PDF (1/17 Pages) Renesas Technology Corp – SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function

μPD5756T6N
SiGe BiCMOS Integrated Circuit
Wide Band LNA IC with Through Function
Data Sheet
R09DS0026EJ0100
Rev.1.00
Oct 04, 2011
DESCRIPTION
The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV
application. This IC exhibits low noise figure and low distortion characteristics.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES
• Low voltage operation
: V_CC = 3.1 to 3.5 V (3.3 V TYP.)
• Low current consumption
: I_CC1 = 25 mA TYP. @V_CC = 3.3 V (LNA-mode)
: I_CC2 = 1 μA MAX. @V_CC = 3.3 V (Bypass-mode)
• Operation frequency
: f = 40 to 1 000 MHz
• Low noise
: NF = 3.2 dB TYP. @f = 1 000 MHz (LNA-mode)
• Low distortion
: IIP₃ = +9 dBm TYP. @f1 = 500 MHz, f2 = 505 MHz (LNA-mode)
• Low insertion loss
: L_ins = 1.7 dB TYP. @f = 1 000 MHz (Bypass-mode)
• High-density surface mounting : 6-pin plastic TSON (T6N) package (1.5 × 1.5 × 0.37 mm)
APPLICATIONS
• Low noise amplifier for the digital TV system, etc.
ORDERING INFORMATION
Part Number
Order Number
Package Marking
Supplying Form
μPD5756T6N-E2 μPD5756T6N-E2-A 6-pin plastic
TSON (T6N)
C4C
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
(Pb-Free)
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5756T6N
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
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