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| UPD166108GR Datasheet, PDF (1/16 Pages) Renesas Technology Corp – MOS INTEGRATED CIRCUIT | |||
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Preliminary Data Sheet
mPD166108GR
MOS INTEGRATED CIRCUIT
R07DS1119EJ0100
Rev.1.00
Sep 20, 2013
Description
The mPD166108 is an N-channel low side driver with embedded protection function.
When device is overtemperature or overcurrent is generated in output MOS, the protection function operates to prevent
destruction and degradation of the product, and also outputs self-diagnostic signal.
Features
· High temperature operation (Tch = 175°C MAX.)
· Low on-state resistance
RDS(ON) = 200 mW MAX. (VIN = 5.0V, IO = 0.9A, Tch = 25°C)
· Built-in protection circuit
¾ Current limitation
¾ Overtemperature protection
· Built in dynamic clamp circuit
· Dual channel Low-side switch
· Package: Power SOP 8
Application
· Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor
Ordering Information
Part No.
mPD166108GR-E1-AY
Sn
mPD166108GR-E2-AY
Sn
Lead Plating
Packing
Tape 2500 p/reel
Tape 2500 p/reel
Package
Power SOP 8
Power SOP 8
R07DS1119EJ0100 Rev.1.00
Sep 20, 2013
Page 1 of 14
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