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UPD166020T1F Datasheet, PDF (1/25 Pages) Renesas Technology Corp – MOS INTEGRATED CIRCUIT
μPD166020T1F
MOS INTEGRATED CIRCUIT
Preliminary Data Sheet
R07DS0441EJ0100
Rev.1.00
Aug 15, 2011
1. Overview
1.1 Description
The μPD166020T1F is a single N-channel high-side switch with charge pump, diagnostic feedback with load current
sense and embedded protection functions.
1.2 Features
• Built-in charge pump
• Low on-state resistance
• Short circuit protection
- Shutdown by over current detection and over load detection
• Over temperature protection
- Shutdown with auto-restart on cooling
• Built-in diagnostic function
- Proportional load current sensing
- Defined fault signal in case of abnormal load condition
• Under voltage lock out
• Reverse battery protection by self turn on of N-ch MOSFET
• Small multi-chip package: JEDEC 5-pin TO-252 (MSL: 3, profile acc. J-STD-20C)
• AEC Qualified
1.3 Applications
• Light bulb (to 65 W) switching
• Switching of all types of 14 V DC grounded loads, such as LED, inductor, resistor and capacitor
• Replacement for fuse and relay
2. Ordering Information
Part No.
Lead plating
Packing
μ PD166020T1F-E1-AY ∗1
Sn
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
5-pin TO-252 (MP-3ZK)
R07DS0441EJ0100 Rev.1.00
Aug 15, 2011
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