UPD166015GR Datasheet, PDF (1/17 Pages) Renesas Technology Corp – MOS INTEGRATED CIRCUIT

Preliminary Data Sheet
PD166015GR
MOS INTEGRATED CIRCUIT
R07DS0595EJ0100
Rev.1.00
Jan 19, 2012
Description
The PD166015 is an N-channel high side driver with built-in charge pump and embedded protection function. It is
also a linear solenoid driver with a built-in differential amplifier.
When device is overtemperature or overcurrent is generated in output MOS, the protection function operates to prevent
destruction and degradation of the product. When the current flows through the external shunt resistor near the input
part of the differential amplifier, the voltage drops at each end of the resistor. The output current can be monitored when
the microcomputer reads the output voltage from the amplifier.
Features
 High temperature operation (Tch = 175°C MAX.)
 Built-in charge pump circuit
 Low on-state resistance
R_DS(ON) = 100 m MAX. (V_IN = V_IH, I_O = 1.5A, Tch = 25°C)
 Built-in protection circuit
 Current limitation
 Overtemperature protection
 Built-in differential amplifier (gain = 8 times)
 Package: Power SOP 8
Application
 Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor
Ordering Information
Part No.
PD166015GR-E1-AY
Sn
PD166015GR-E2-AY
Sn
Lead Plating
Packing
Tape 2500 p/reel
Tape 2500 p/reel
Package
Power SOP 8
Power SOP 8
R07DS0595EJ0100 Rev.1.00
Jan 19, 2012
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