UPA862TD Datasheet, PDF (1/20 Pages) NEC – NECs NPN SILICON RF TWIN TRANSISTOR

Preliminary Data Sheet
μPA862TD
NPN Silicon RF Twin Transistor (with 2 Different Elements)
in a 6-pin Lead-less Minimold
R09DS0032EJ0200
Rev.2.00
Dec 19, 2011
FEATURES
• Low voltage operation
<R> • 2 different built-in transistors (2SC5010, 2SC5801)
Q1: Built-in high gain transistor
fT = 12.0 GHz TYP., ⏐S21e⏐² = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 4.5 GHz TYP., ⏐S21e⏐² = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
<R> 3-pin thin-type ultra super minimold part No.
Q1
2SC5010
Q2
2SC5801
<R> ORDERING INFORMATION
Part Number Order Number Quantity
Package
μPA862TD
μPA862TD-A
50 pcs (Non reel) 6-pin lead -less minimold
μPA862TD-T3 μPA862TD-T3-A 10 kpcs/reel
(1208) (Pb-Free)
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
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