UPA503CT Datasheet, PDF (1/8 Pages) Renesas Technology Corp – P-CHANNEL MOSFET FOR SWITCHING

Preliminary Data Sheet
µPA503CT
P-CHANNEL MOSFET FOR SWITCHING
R07DS1279EJ0200
Rev.2.00
Jul 08, 2015
Description
The µPA503CT, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
 Two MOSFET circuits (Two source common)
 Directly driven by a 4.5 V power source.
 Low on-state resistance
RDS(on)1 = 2.7  MAX. (VGS = -10 V, ID = -100 mA)
RDS(on)2 = 3.2  MAX. (VGS = -4.5 V, ID = -50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
µPA503CT-T1-A/AT
-A:Sn-Bi, -AT:Pure Sn
3000p/Reel
SC-74A (5pMM)
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking UF
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW  10 s, Duty Cycle  1%
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
-60
V
∓20
V
∓100
mA
∓200
mA
300 (Total)
mW
150
C
55 to 150
C
R07DS1279EJ0200 Rev.2.00
Jul 08, 2015
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