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UPA3753GR_16 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – DUAL N-channel MOSFET | |||
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μPA3753GR
DUAL N-channel MOSFET
60V, 5A, 56mΩ
Data Sheet
R07DS1322EJ0100
Rev.1.00
Jan 25, 2016
Description
The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application.
Features
⢠Dual chip type
⢠Low on-state resistance
⯠RDS(on) = 56 m⦠MAX. (VGS = 10 V, ID = 2.5 A)
⯠RDS(on) = 72 m⦠MAX. (VGS = 4.5 V, ID = 2.5 A)
⢠Low gate charge
⯠QG = 13.4 nC TYP. (VGS = 10 V)
⢠Small and surface mount package (SOP-8)
SOP-8
Ordering Information
Part No.
μPA3753GR-E1-AX *1
μPA3753GR-E2-AX *1
Lead Plating
Ni / Pd / Au
Packing
Tape 2500 p/reel
Package
SOP-8
0.085 g TYP.
Note: *1. Pb-Free (This product does not contain Pb in the external electrode and other parts.)
â-E1â,â-E2â indicates the unit orientation.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) *1
Total Power Dissipation (1unit) *2
Total Power Dissipation (2units) *2
Channel Temperature
Storage Temperature
Single Avalanche Current *3
Single Avalanche Energy *3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
TSTG
IAS
EAS
Ratings
60
±20
±5.0
±20
0.85
1.12
150
â55 to +150
5.0
2.5
Notes: *1. PW ⤠10 μs, Duty Cycle ⤠1%
*2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
*3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 â 0 V, L = 100 μH
Unit
V
V
A
A
W
W
°C
°C
A
mJ
R07DS1322EJ0100 Rev.1.00
Jan 25, 2016
Page 1 of 6
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