UPA3753GR Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

μPA3753GR
MOS FIELD EFFECT TRANSISTOR
Data Sheet
R07DS0758EJ0100
Rev.1.00
May 25, 2012
Description
The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application.
Features
• Dual chip type
• Low on-state resistance
⎯ R_DS(on) = 56 mΩ MAX. (V_GS = 10 V, I_D = 2.5 A)
⎯ R_DS(on) = 72 mΩ MAX. (V_GS = 4.5 V, I_D = 2.5 A)
• Low gate charge
⎯ Q_G = 13.4 nC TYP. (V_GS = 10 V)
• Small and surface mount package (Power SOP8)
Ordering Information
Part No.
μPA3753GR-E1-AT ^*1
μPA3753GR-E2-AT ^*1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Note: *1. Pb-Free (This product does not contain Pb in the external electrode and other parts.)
“-E1”,”-E2” indicates the unit orientation.
Absolute Maximum Ratings (T_A = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^*1
Total Power Dissipation (1unit) ^*2
Total Power Dissipation (2units) ^*2
Channel Temperature
Storage Temperature
Single Avalanche Current ^*3
Single Avalanche Energy ^*3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
TSTG
IAS
EAS
Ratings
60
±20
±5.0
±20
0.85
1.12
150
−55 to +150
5.0
2.5
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Notes: *1. PW ≤ 10 μs, Duty Cycle ≤ 1%
*2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
*3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
R07DS0758EJ0100 Rev.1.00
May 25, 2012
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