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| UPA2826T1S Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-channel MOSFET 20 V, 27 A, 4.3 mA | |||
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Data Sheet
μPA2826T1S
N-channel MOSFET
20 V , 27 A , 4.3 mΩ
R07DS0989EJ0100
Rev.1.00
Dec 25, 2012
Description
The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable
equipment .
Features
⢠VDSS = 20 V (TA = 25°C)
⢠Low on-state resistance
⯠RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A)
⢠2.5 V Gate-drive available
⢠Small & thin type surface mount package with heat spreader
⢠Pb-free and Halogen free
HWSON-8
Ordering Information
Part No.
LEAD PLATING
PACKING
Package
μ PA2826T1S-E2-ATâ1
Pure Sn(Tin)
HWSON-8
Tape 5000 p/reel
0.022 g TYP.
Note: â1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation â2
Total Power Dissipation (PW = 10 sec) â2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
Ratings
20
±12
±27
±81
1.5
3.8
20
150
â55 to +150
Unit
V
V
A
A
W
W
W
°C
°C
Thermal Resistance
Channel to Ambient Thermal Resistance â2
Channel to Case(Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
6.25
°C/W
°C/W
Notes: â1. PW ⤠10 μs, Duty Cycle ⤠1%
â2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
R07DS0989EJ0100 Rev.1.00
Dec 25, 2012
Page 1 of 6
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