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UPA2816T1S Datasheet, PDF (1/7 Pages) Renesas Technology Corp – P-channel MOSFET –30 V, –17 A, 15.5 mΩ | |||
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μPA2816T1S
P-channel MOSFET
â30 V, â17 A, 15.5 mΩ
Data Sheet
R07DS0778EJ0101
Rev.1.01
May 28, 2013
Description
The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
⢠VDSS = â30 V (TA = 25°C)
⢠Low on-state resistance
⯠RDS(on) = 15.5 mΩ MAX. (VGS = â10 V, ID = â17 A)
⢠4.5 V Gate-drive available
⢠Small & thin type surface mount package with heat spreader
⢠Pb-free and Halogen free
HWSON-8
Ordering Information
Part No.
LEAD PLATING
PACKING
μPA2816T1S-E2-AT â1
Pure Sn
HWSON-8
Tape 5000 p/reel
typ. 0.022 g
Note: â1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Package
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation â2
Total Power Dissipation (PW = 10 sec) â2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current â3
Single Avalanche Energy â3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
â30
â25 / +20
m17
m68
1.5
3.8
12
150
â55 to +150
17
28.9
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance â2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
10.4
°C/W
°C/W
Notes: â1. PW ⤠10 μs, Duty Cycle ⤠1%
â2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
â3. Starting Tch = 25°C, VDD = â15 V, RG = 25 Ω, VGS = â20 â 0 V, L = 100 μH
R07DS0778EJ0101 Rev.1.01
May 28, 2013
Page 1 of 6
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