UPA2815T1S Datasheet, PDF (1/7 Pages) Renesas Technology Corp – P-channel MOSFET-30 V, –21 A, 11 m

μPA2815T1S
P-channel MOSFET
–30 V, –21 A, 11 mΩ
Data Sheet
R07DS0777EJ0101
Rev.1.01
May 28, 2013
Description
The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• V_DSS = −30 V (T_A = 25°C)
• Low on-state resistance
⎯ R_DS(on) = 11 mΩ MAX. (V_GS = −10 V, I_D = −21 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free
HWSON-8
Ordering Information
Part No.
Lead Plating
Packing
μPA2815T1S-E2-AT ^∗1
Pure Sn
HWSON-8
Tape 5000 p/reel
typ. 0.022 g
Note: ^∗1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Package
Absolute Maximum Ratings (T_A = 25°C)
Item
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC) (T_C = 25°C)
Drain Current (pulse) ^∗1
Total Power Dissipation ^∗2
Total Power Dissipation (PW = 10 sec) ^∗2
Total Power Dissipation (T_C = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ^∗3
Single Avalanche Energy ^∗3
Symbol
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
P_T3
T_ch
T_stg
I_AS
E_AS
Ratings
−30
m20
m21
m84
1.5
3.8
14.5
150
−55 to +150
19
36.1
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ^∗2
Channel to Case (Drain) Thermal Resistance
R_th(ch-A)
R_th(ch-C)
83.3
8.6
°C/W
°C/W
Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗_{2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt}
∗_{3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH}
R07DS0777EJ0101 Rev.1.01
May 28, 2013
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