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UPA2812T1L Datasheet, PDF (1/7 Pages) Renesas Technology Corp – P-channel MOSFEF –30 V, –30 A, 4.8 mΩ | |||
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μPA2812T1L
P-channel MOSFEF
â30 V, â30 A, 4.8 mΩ
Data Sheet
R07DS0762EJ0101
Rev.1.01
May 28, 2013
Description
The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
⢠VDSS = â30 V (TA = 25°C)
⢠Low on-state resistance
⯠RDS(on) = 4.8 mΩ MAX. (VGS = â10 V, ID = â30 A)
⢠4.5 V Gate-drive available
⢠Small & thin type surface mount package with heat spreader
⢠Pb-free and Halogen free
8-pin HVSON(3333)
Ordering Information
Part No.
Lead Plating
Packing
Package
μPA2812T1L-E2-AT *1
Pure Sn
8-pin HVSON (3333)
Tape 3000 p/reel
typ. 0.028 g
Note: â1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation â2
Total Power Dissipation (PW = 10 sec) â2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current â3
Single Avalanche Energy â3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
â30
m20
m30
m120
1.5
3.8
52
150
â55 to +150
25
62
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance â2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes: â1. PW ⤠10 μs, Duty Cycle ⤠1%
â2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
â3. Starting Tch = 25°C, VDD = â15 V, RG = 25 Ω, VGS = â20 â 0 V, L = 100 μH
R07DS0762EJ01001 Rev.1.01
May 28, 2013
Page 1 of 6
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