UPA2811T1L Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

μ PA2811T1L
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0191EJ0100
Rev.1.00
Jan 11, 2011
Description
The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• V_DSS −30 V (T_A = 25°C)
• Low on-state resistance
⎯ R_DS(on) = 15 mΩ MAX. (V_GS = −10 V, I_D = −19 A)
• 4.5 V Gate-drive available
• Built-in gate protection diode
• Small & thin type surface mount package with heat spreader (8-pin HVSON)
• Halogen free and RoHS compliant
Ordering Information
Part No.
LEAD PLATING
PACKING
μ PA2811T1L-E1-AY ^∗1
Pure Sn
Tape 3000 p/reel
μ PA2811T1L-E2-AY ^∗1
Note: ^∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
8-pin HVSON (3333)
typ. 0.028 g
Absolute Maximum Ratings (T_A = 25°C)
Item
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC) (T_C = 25°C)
Drain Current (pulse) ^∗1
Total Power Dissipation ^∗2
Total Power Dissipation (PW = 10 sec) ^∗2
Total Power Dissipation (T_C = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ^∗3
Single Avalanche Energy ^∗3
Symbol
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
P_T3
T_ch
T_stg
I_AS
E_AS
Ratings
−30
m25
m19
m76
1.5
3.8
52
150
−55 to +150
−19
36
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ^∗2
R_th(ch-A)
Channel to Case (Drain) Thermal Resistance R_th(ch-C)
83.3
2.4
°C/W
°C/W
Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗_{2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt}
∗_{3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH}
R07DS0191EJ0100 Rev.1.00
Jan 11, 2011
Page 1 of 6