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| UPA2764T1A Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-channel MOSFET 30 V , 130 A , 1.10 m | |||
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Data Sheet
μPA2764T1A
N-channel MOSFET
30 V , 130 A , 1.10 mΩ
R07DS0881EJ0102
Rev.1.02
Nov 28, 2012
Description
The μ PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application.
Features
⢠VDSS = 30 V (TA = 25°C)
⢠Low on-state resistance
⯠RDS(on) = 1.10 mΩ MAX. (VGS = 10 V, ID = 46 A)
⯠RDS(on) = 2.45 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
⢠4.5 V Gate-drive available
⢠Thin type surface mount package with heat spreader
⢠Halogen free
8-pin HVSON(6051)
Ordering Information
Part No.
LEAD PLATING
PACKING
μ PA2764T1A-E2-AYâ1
Pure Sn
Tape 3000 p/reel
Note: â1. Pb-free (This product does not contain Pb in external electrode.)
Package
8-pin HVSON(6051)
0.1 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation â2
Total Power Dissipation (PW = 10 sec) â2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current â3
Single Avalanche Energy â3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
±20
±130
±280
1.5
4.6
83
150
â55 to +150
50
250
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance â2
Channel to Case(Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
1.5
°C/W
°C/W
Notes: â1. PW ⤠10 μs, Duty Cycle ⤠1%
â2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
â3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 â 0 V, L = 100 μH
R07DS0881EJ0102 Rev.1.02
Nov 28, 2012
Page 1 of 6
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