UPA2762UGR Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

μ PA2762UGR
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0011EJ0100
Rev.1.00
Jun 01, 2010
Description
The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a
notebook computer.
Features
• Low on-state resistance
⎯ R_DS(on)1 = 13.5 mΩ MAX. (V_GS = 10 V, I_D = 12 A)
⎯ R_DS(on)2 = 22 mΩ MAX. (V_GS = 4.5 V, I_D = 10 A)
• Low Ciss: Ciss = 710 pF TYP. (V_DS = 15 V, V_GS = 0 V)
• Small and surface mount package (Power SOP8)
• RoHS Compliant
Ordering Information
Part No.
LEAD PLATING
PACKING
Package
μ PA2762UGR-E1-AT ^∗1
Pure Sn (Tin)
Tape 2500 p/reel Power SOP8
μ PA2762UGR-E2-AT ^∗1
0.08 g TYP.
Note: ^∗1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (T_A = 25°C, All terminals are connected)
Item
Symbol
Ratings
Drain to Source Voltage (V_GS = 0 V)
V_DSS
30
Gate to Source Voltage (V_DS = 0 V)
V_GSS
±20
Drain Current (DC)
I_D(DC)
±12
Drain Current (pulse) ^∗1
I_D(pulse)
±50
Total Power Dissipation ^∗2
P_T1
1.1
Total Power Dissipation (PW = 10 sec) ^∗2
P_T2
2.5
Channel Temperature
T_ch
150
Storage Temperature
T_stg
−55 to +150
Single Avalanche Current ^∗3
I_AS
12
Single Avalanche Energy ^∗3
E_AS
14.4
Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗_{2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt}
∗_{3. Starting Tch = 25°C, VDD = 17.5 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH}
Unit
V
V
A
A
W
W
°C
°C
A
mJ
R07DS0011EJ0100 Rev.1.00
Jun 01, 2010
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