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UPA2761UGR Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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μ PA2761UGR
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0010EJ0100
Rev.1.00
Jun 01, 2010
Description
The μ PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a
notebook computer.
Features
⢠Low on-state resistance
⯠RDS(on)1 = 18.5 mΩ MAX. (VGS = 10 V, ID = 9 A)
⯠RDS(on)2 = 30 mΩ MAX. (VGS = 4.5 V, ID = 7 A)
⢠Low Ciss: Ciss = 550 pF TYP. (VDS = 15 V, VGS = 0 V)
⢠Small and surface mount package (Power SOP8)
⢠RoHS Compliant
Ordering Information
Part No.
LEAD PLATING
PACKING
Package
μ PA2761UGR-E1-AT â1
Pure Sn (Tin)
Tape 2500 p/reel Power SOP8
μ PA2761UGR-E2-AT â1
0.08 g TYP.
Note: â1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C, All terminals are connected)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±25
Drain Current (DC)
ID(DC)
±9
Drain Current (pulse) â1
ID(pulse)
±40
Total Power Dissipation â2
PT1
1.1
Total Power Dissipation (PW = 10 sec) â2
PT2
2.5
Channel Temperature
Tch
150
Storage Temperature
Tstg
â55 to +150
Single Avalanche Current â3
IAS
9
Single Avalanche Energy â3
EAS
8.1
Notes: â1. PW ⤠10 μs, Duty Cycle ⤠1%
â2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
â3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 â 0 V, L = 100 μH
Unit
V
V
A
A
W
W
°C
°C
A
mJ
R07DS0010EJ0100 Rev.1.00
Jun 01, 2010
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