UPA2739T1A Datasheet, PDF (1/7 Pages) Renesas Technology Corp – P-channel MOSFET -30 V, -85 A, 2.8 m

Data Sheet
μPA2739T1A
P-channel MOSFET
–30 V, –85 A, 2.8 mΩ
R07DS0885EJ0102
Rev.1.02
Nov 28, 2012
Description
The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• V_DSS = −30 V (T_A = 25°C)
• Low on-state resistance
⎯ R_DS(on) = 2.8 mΩ MAX. (V_GS = −10 V, I_D = −46 A)
⎯ R_DS(on) = 5.7 mΩ MAX. (V_GS = −4.5 V, I_D = −23 A)
• 4.5 V Gate-drive available
• Thin type surface mount package with heat spreader
• Halogen free
Ordering Information
8-pin HVSON(6051)
Part No.
μ PA2739T1A-E2-AY^∗1
LEAD PLATING
PACKING
Pure Sn
Tape 3000 p/reel
Note: ^∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
8-pin HVSON(6051)
0.1 g TYP.
Absolute Maximum Ratings (T_A = 25°C)
Item
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC) (T_C = 25°C)
Drain Current (pulse) ^∗1
Total Power Dissipation ^∗2
Total Power Dissipation (PW = 10 sec) ^∗2
Total Power Dissipation (T_C = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ^∗3
Single Avalanche Energy ^∗3
Symbol
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
P_T3
T_ch
T_stg
I_AS
E_AS
Ratings
−30
m20
m85
m180
1.5
4.6
83
150
−55 to +150
-40
160
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ^∗2
Channel to Ambient Thermal Resistance ^∗2
R_th(ch-A)
R_th(ch-C)
83.3
1.5
°C/W
°C/W
Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗_{2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt}
∗_{3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH}
R07DS0885EJ0102 Rev.1.02
Nov 28, 2012
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