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UPA2737GR_16 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – P-channel MOSFET | |||
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Data Sheet
μPA2737GR
P-channel MOSFET
â30 V, â11 A, 13 mΩ
R07DS1317EJ0100
Rev.1.00
Jan 12, 2016
Description
The μ PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
⢠VDSS = â30 V (TA = 25°C)
⢠Low on-state resistance
⯠RDS(on) = 13 mΩ MAX. (VGS = â10 V, ID = â11 A)
⢠4.5 V Gate-drive available
⢠Small and surface mount package (SOP-8)
⢠Pb-free and Halogen free
Ordering Information
SOP-8
Part No.
μ PA2737GR-E1-AX
μ PA2737GR-E2-AX
LEAD PLATING
Ni / Pd / Au
PACKING
Tape 2500 p/reel
Package
SOP-8
0.085 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) â1
Total Power Dissipation â2
Total Power Dissipation (PW = 10 sec) â2
Channel Temperature
Storage Temperature
Single Avalanche Current â3
Single Avalanche Energy â3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
â30
m20
m11
m110
1.1
2.5
150
â55 to +150
11
12.1
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance â2
Rth(ch-A)
114
°C/W
Notes: â1. PW ⤠10 μs, Duty Cycle ⤠1%
â2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
â3. Starting Tch = 25°C, VDD = â15 V, RG = 25 Ω, VGS = â20 â 0 V, L = 100 μH
R07DS1317EJ0100 Rev.1.00
Jan 12, 2016
Page 1 of 6
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