UPA2736GR Datasheet, PDF (1/8 Pages) Renesas Technology Corp – P-channel MOSFET -30 V, -14 A, 7.0 m

Data Sheet
μPA2736GR
P-channel MOSFET
–30 V, –14 A, 7.0 mΩ
R07DS0868EJ0100
Rev.1.00
Aug 28, 2012
Description
The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• V_DSS = −30 V (T_A = 25°C)
• Low on-state resistance
⎯ R_DS(on) = 7.0 mΩ MAX. (V_GS = −10 V, I_D = −14 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free
Ordering Information
Power SOP8
Part No.
μ PA2736GR-E1-AT
μ PA2736GR-E2-AT
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (T_A = 25°C)
Item
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^∗1
Total Power Dissipation ^∗2
Total Power Dissipation (PW = 10 sec) ^∗2
Channel Temperature
Storage Temperature
Single Avalanche Current ^∗3
Single Avalanche Energy ^∗3
Symbol
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
T_ch
T_stg
I_AS
E_AS
Ratings
−30
m20
m14
m140
1.1
2.5
150
−55 to +150
14
19.6
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ^∗2
R_th(ch-A)
114
°C/W
Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗_{2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt}
∗_{3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH}
R07DS0868EJ0100 Rev.1.00
Aug 28, 2012
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