UPA2670T1R Datasheet, PDF (1/7 Pages) Renesas Technology Corp – DUAL P-CHANNEL MOSFET -20 V, -3.0 A, 79 m

μPA2670T1R
DUAL P-CHANNEL MOSFET
–20 V, –3.0 A, 79 mΩ
Data Sheet
R07DS0833EJ0101
Rev.1.01
Apr 15, 2013
Description
The μPA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
• –1.8V drive available
• Low on-state resistance
⎯ R_{DS (on)1} = 79 mΩ MAX. (V_GS = –4.5 V, I_D = –1.5 A)
⎯ R_{DS (on)2} = 105 mΩ MAX. (V_GS = –2.5 V, I_D = –1.5 A)
⎯ R_{DS (on)3} = 182 mΩ MAX. (V_GS = –1.8 V, I_D = –1.5 A)
• Built-in gate protection diode
• Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
μPA2670T1R-E2-AX^∗1
Package
6pinHUSON2020
Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (T_A = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^∗1
Total Power Dissipation (1 unit, 5 s) ^∗2
Total Power Dissipation (2 units, 5 s) ^∗2
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
–20
V
m10
V
m3.0
A
m12
A
1.5
W
2.3
W
Channel Temperature
T_ch
150
°C
Storage Temperature
Notes: ∗1. PW≤10 μs, Duty Cycle≤1%
T_STG
–55 to +150 °C
∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
R07DS0883EJ0101 Rev.1.01
Apr 15, 2013
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