UPA2660T1R Datasheet, PDF (1/7 Pages) Renesas Technology Corp – DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 m

μPA2660T1R
DUAL N-CHANNEL MOSFET
20 V, 4.0 A, 42 mΩ
Data Sheet
R07DS0999EJ0100
Rev.1.00
Jan 16, 2013
Description
The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
• DS MAXIMUM RATINGS 20V(T_A = 25°C)
• 2.5V drive available
• Low on-state resistance
⎯ R_{DS (on)1} = 42 mΩ MAX. (V_GS = 4.5 V, I_D = 2.0 A)
⎯ R_{DS (on)2} = 62 mΩ MAX. (V_GS = 2.5 V, I_D = 2.0 A)
• Built-in gate protection diode
• Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
μPA2660T1R-E2-AX^∗1
Package
6pinHUSON2020(Dual)
Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (T_A = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^∗1
Total Power Dissipation (1 unit, 5 s) ^∗2
Total Power Dissipation (2 units, 5 s) ^∗2
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
20
V
±12
V
±4.0
A
±16
A
1.5
W
2.3
W
Channel Temperature
T_ch
150
°C
Storage Temperature
Notes: ∗1. PW≤10 μs, Duty Cycle≤1%
T_STG
–55 to +150 °C
∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
Caution: This product is electrostatic-sensitive device due to low ESD capability and should be handled
with caution for electrostatic discharge.
V_ESD = ±400V MIN. ( C = 100pF, R = 1.5KΩ )
R07DS0999EJ0100 Rev.1.00
Jan 16, 2013
Page 1 of 6