UPA2600T1R Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m

μPA2600T1R
N-CHANNEL MOSFET
20 V, 7.0 A, 13.8 mΩ
Data Sheet
R07DS0998EJ0100
Rev.1.00
Jan 15, 2013
Description
The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
• High Drain to Source Voltage
⎯ V_DSS = 20 V (V_GS = 0 V, T_A = 25°C)
• 2.5V drive available
• Low on-state resistance
⎯ R_{DS (on)1} = 13.8 mΩ MAX. (V_GS = 4.5 V, I_D = 3.5 A)
⎯ R_{DS (on)2} = 19.1 mΩ MAX. (V_GS = 2.5 V, I_D = 3.5 A)
• Built-in gate protection diode
• Lead-free and Halogen-free
6pinHUSON2020
Ordering Information
Part Number
Package
μPA2600T1R-E2-AX^∗1
6pinHUSON2020
Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (T_A = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC) (T_C = 25 °C)
Drain Current (pulse) ^∗1
Total Power Dissipation (5 s) ^∗2
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T
20
V
±12
V
±7.0
A
±28
A
2.4
W
Channel Temperature
T_ch
150
°C
Storage Temperature
Notes: ∗1. PW≤10 μs, Duty Cycle≤1%
T_STG
–55 to +150 °C
∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
R07DS0998EJ0100 Rev.1.00
Jan 15, 2013
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