UPA2373T1P Datasheet, PDF (1/11 Pages) Renesas Technology Corp – Dual Drain common, N-channel MOSFET 24V, 6A, 23.0m

Preliminary Data Sheet
μPA2373T1P
Dual (Drain common), N-channel MOSFET
24V, 6A, 23.0mΩ
R07DS0674EJ0101
Rev.1.01
Aug 19, 2013
DESCRIPTION
The μPA2373T1P is a switching device, which can be driven directly by a 2.5 V power source.
The μPA2373T1P features a low on-state resistance and excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and so on. Best suite for single cell LiB application.
FEATURES
• 2.5 V drive available
• Low on-state resistance
⎯ R_SS(on)1 = 23.0 mΩ MAX. (V_GS = 4.5 V, I_S = 3.0 A)
⎯ R_SS(on)2 = 24.0 mΩ MAX. (V_GS = 4.0 V, I_S = 3.0 A)
⎯ R_SS(on)3 = 25.0 mΩ MAX. (V_GS = 3.8 V, I_S = 3.0 A)
⎯ R_SS(on)4 = 30.0 mΩ MAX. (V_GS = 3.1 V, I_S = 3.0 A)
⎯ R_SS(on)4 = 39.0 mΩ MAX. (V_GS = 2.5 V, I_S = 3.0 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
Part No.
Lead Plating
Packing
Package
μPA2373T1P-E4-A^∗1
Ni/Au
Reel 5000 p/reel
4-pin EFLIP-LGA
Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C)
Item
Symbol
Source to Source Voltage (V_GS = 0 V) V_SSS
Gate to Source Voltage (V_DS = 0 V)
Source Current (DC) ^∗1
Source Current (pulse) ^∗2
Total Power Dissipation (2 units) ^∗1
V_GSS
I_S(DC)
I_S(pulse)
P_T1
Channel Temperature
T_ch
Storage Temperature
T_stg
Note: ^∗1. Mounted on ceramic board of 50 cm² ×1.0 mmt
∗_{2. PW ≤ 10 μs, Duty Cycle ≤ 1%}
Ratings
24.0
±12.0
±6.0
±60
1.3
150
−55 to +150
Unit
V
V
A
A
W
°C
°C
R07DS0674EJ0101 Rev.1.01
Aug 19, 2013
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