UPA1931 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

PA1931
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0009EJ0103
Rev.1.03
May 09, 2012
Description
The PA1931 is a switching device, which can be driven directly by a 4.5 V power source.
The PA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
 4.5 V drive available
 Low on-state resistance
 R_DS(on)1 = 65 m MAX. (V_GS = −10 V, I_D = −1.8 A)
 R_DS(on)2 = 100 m MAX. (V_GS = −4.5 V, I_D = −1.8 A)
Ordering Information
Part No.
PA1931TE-T1-AT ^*1
PA1931TE-T2-AT ^*1
Lead Plating
Pure Sn (Tin)
Packing
Tape 3000 p/reel
Note: *1 This product does not contain Pb.
"-T1" and "-T2" in Part No. indicate the unit orientation.
Marking: UB
Package
SC-95 (Mini Mold Thin Type)
typ. 0.011 g
Absolute Maximum Ratings (T_A = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (V_GS = 0 V)
V_DSS
−40
Gate to Source Voltage (V_DS = 0 V)
V_GSS
 20
Drain Current (DC) (T_A = 25°C)
Drain Current (pulse) ^*1
I_D(DC)
I_D(pulse)
 4.5
 18
Total Power Dissipation
P_T1
0.2
Total Power Dissipation ^*2
P_T2
2.0
Channel Temperature
Storage Temperature
Single Avalanche Current ^*3
Single Avalanche Energy ^*3
T_ch
150
T_stg
−55 to +150
I_AS
3.5
E_AS
1.2
Notes: *1 P_W  10 s, Duty Cycle  1%
*2 Mounted on FR-4 board of 50 mm  50 mm  1.6 mmt, t  5 sec
*3 T_ch(peak)  150°C, R_G = 25 
Unit
V
V
A
A
W
W
°C
°C
A
mJ
R07DS0009EJ0103 Rev.1.03
May 09, 2012
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