TBB1012_11 Datasheet, PDF (1/14 Pages) Renesas Technology Corp – Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Preliminary Datasheet
TBB1012
Twin Built in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
R07DS0317EJ0300
(Previous: REJ03G1245-0200)
Rev.3.00
Mar 28, 2011
Features
• Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
• Very useful for total tuner cost reduction.
• Suitable for World Standard Tuner RF amplifier.
• High gain
• Low noise
• Low output capacitance
• Power supply voltage: 5 V
Outline
Notes:
RENESAS Package code: PTSP0006JA-A
(Package name: CMPAK-6)
4
5
6
3
2
1
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
1. Marking is “MM“.
2. TBB1012 is individual type number of Renesas TWIN BBFET.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
V_G2S
Drain current
Channel power dissipation
I_D
Pch^Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 3. Value on the glass epoxy board (50mm × 40mm × 1mm).
Ratings
6
+6
–0
+6
–0
30
250
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
R07DS0317EJ0300 Rev.3.00
Mar 28, 2011
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