TBB1004_11 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

Preliminary Datasheet
TBB1004
Twin Built in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
R07DS0314EJ1200
(Previous: REJ03G0842-1100)
Rev.12.00
Mar 28, 2011
Features
• Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
• Suitable for World Standard Tuner RF amplifier.
• Very useful for total tuner cost reduction.
• Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-6
Outline
RENESAS Package code: PTSP0006JA-A
(Package name: CMPAK-6)
4
5
6
3
2
1
Notes: 1. Marking is “DM”.
2. TBB1004 is individual type number of RENESAS TWIN BBFET.
1. Drain(1)
2. Source
3. Gate-1(1)
4. Gate-1(2)
5. Gate-2
6. Drain(2)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
V_G2S
Drain current
Channel power dissipation
I_D
Pch^*3
Channel temperature
Tch
Storage temperature
Tstg
Note: 3. Value on the glass epoxy board (49mm × 38mm × 1mm).
Ratings
6
+6
-0
+6
-0
30
250
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
R07DS0314EJ1200 Rev.12.00
Mar 28, 2011
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