RQM2201DNS Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

RQM2201DNS
Silicon N Channel MOS FET
Power Switching
Features
• Small, thin and leadless type package (3 × 3 mm, t = 0.8 mm max.)
• Two FET chips are mounted in one package
• High density mounting
• High speed switching. (Ciss = 200 pF typ)
• V_DSS ≥ 60 V and capable of 2.5 V gate drive
Outline
REJ03G1492-0200
Rev.2.00
Apr 16, 2007
RENESAS Package code: PWSN0006ZA-A
(Package name: WSON0303-6 <HWSON-6>)
1
4
56
4 32 1
(Bottom view)
FET No.1
(Nch)
6
D
2
G
FET No.2
(Nch)
5
D
4
G
1, 3: Source
2, 4: Gate
5, 6: Drain
Notes:
S
S
1
3
1. Marking is “M2201“.
2. The following maximum ratings and electric characteristics are applied to both FET1 and
FET2.
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
60
Gate to source voltage
V_GSS
±12
Drain current
Drain peak current
I_D
2
I_D(pulse) ^Note1
8
Body - drain diode reverse drain current
I_DR
2
Channel dissipation
Pch ^Note2
1
Channel dissipation
Pch ^Note3
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
3. 2 Drive operation: When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
REJ03G1492-0200 Rev.2.00 Apr 16, 2007
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