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RQK2501YGDQA Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching | |||
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RQK2501YGDQA
Silicon N Channel MOS FET
Power Switching
Features
⢠High drain to source voltage and Low gate drive
VDSS : 250 V and 2.5 V gate drive
⢠Low drive current
⢠High speed switching
⢠Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
REJ03G1521-0200
Rev.2.00
Nov 06, 2007
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ⤠10 µs, Duty cycle ⤠1%
2. When using the glass epoxy board (FR-4 40 Ã 40 Ã 1 mm)
Ratings
250
±10
0.4
1.6
0.4
0.8
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
REJ03G1521-0200 Rev.2.00 Nov 06, 2007
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